002 - Advanced Components and Circuits Flashcards
A-002-001-001
What two elements widely used in semiconductor devices exhibit both metallic and non-metallic characteristics?
(a) Galena and germanium
(b) Galena and bismuth
(c) Silicon and gold
(d) Silicon and germanium
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What two elements widely used in semiconductor devices exhibit both metallic and non-metallic characteristics?
(d) Silicon and germanium
A-002-001-002
In what application is gallium-arsenide used as a semiconductor material in preference to germanium or silicon?
(a) In high-power circuits
(b) At very low frequencies
(c) In bipolar transistors
(d) At microwave frequencies
A-002-001-002
In what application is gallium-arsenide used as a semiconductor material in preference to germanium or silicon?
(d) At microwave frequencies
A-002-001-003
What type of semiconductor material contains fewer free electrons than pure germanium or silicon crystals?
(a) N-type
(b) P-type
(c) Bipolar type
(d) Superconductor type
A-002-001-003
What type of semiconductor material contains fewer free electrons than pure germanium or silicon crystals?
(b) P-type
A-002-001-004
What type of semiconductor material contains more free electrons than pure germanium or silicon crystals?
(a) N-type
(b) P-type
(c) Bipolar
(d) Superconductor
A-002-001-004
What type of semiconductor material contains more free electrons than pure germanium or silicon crystals?
(a) N-type
A-002-001-005
What are the majority charge carriers in P-type semiconductor material?
(a) Free electrons
(b) Holes
(c) Free protons
(d) Free neutrons
A-002-001-005
What are the majority charge carriers in P-type semiconductor material?
(b) Holes
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What are the majority charge carriers in N-type semiconductor material?
(a) Holes
(b) Free protons
(c) Free neutrons
(d) Free electrons
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What are the majority charge carriers in N-type semiconductor material?
(d) Free electrons
A-002-001-007
Silicon, in its pure form, is:
(a) a superconductor
(b) an insulator
(c) a semiconductor
(d) a conductor
A-002-001-007
Silicon, in its pure form, is:
(b) an insulator
A-002-001-008
An element which is sometimes an insulator and sometimes a conductor is called a:
(a) intrinsic conductor
(b) N-type conductor
(c) semiconductor
(d) P-type conductor
A-002-001-008
An element which is sometimes an insulator and sometimes a conductor is called a:
(c) semiconductor
A-002-001-009
Which of the following materials is used to make a semiconductor?
(a) Tantalum
(b) Silicon
(c) Copper
(d) Sulphur
A-002-001-009
Which of the following materials is used to make a semiconductor?
(b) Silicon
A-002-001-010
Substances such as silicon in a pure state are usually good:
(a) insulators
(b) conductors
(c) tuned circuits
(d) inductors
A-002-001-010
Substances such as silicon in a pure state are usually good:
(a) insulators
A-002-001-011
A semiconductor is said to be doped when it has added to it small quantities of:
(a) impurities
(b) protons
(c) ions
(d) electrons
A-002-001-011
A semiconductor is said to be doped when it has added to it small quantities of:
(a) impurities
A-002-002-001
What is the principal characteristic of a Zener diode?
(a) A constant current under conditions of varying voltage
(b) A constant voltage under conditions of varying current
(c) A negative resistance region
(d) An internal capacitance that varies with the applied voltage
A-002-002-001
What is the principal characteristic of a Zener diode?
(b) A constant voltage under conditions of varying current
A-002-002-002
What type of semiconductor diode varies its internal capacitance as the voltage applied to its terminals varies?
(a) Varactor
(b) Zener
(c) Silicon-controlled rectifier
(d) Hot-carrier (Schottky)
A-002-002-002
What type of semiconductor diode varies its internal capacitance as the voltage applied to its terminals varies?
(a) Varactor
A-002-002-003
What is a common use for the hot-carrier (Schottky) diode?
(a) As balanced mixers in FM generation
(b) As VHF and UHF mixers and detectors
(c) As a variable capacitance in an automatic frequency control (AFC) circuit
(d) As a constant voltage reference in a power supply
A-002-002-003
What is a common use for the hot-carrier (Schottky) diode?
(b) As VHF and UHF mixers and detectors
A-002-002-004
What limits the maximum forward current in a junction diode?
(a) Forward voltage
(b) Back EMF
(c) Peak inverse voltage
(d) Junction temperature
A-002-002-004
What limits the maximum forward current in a junction diode?
(d) Junction temperature
A-002-002-005
What are the major ratings for junction diodes?
(a) Maximum forward current and peak inverse voltage (PIV)
(b) Maximum reverse current and capacitance
(c) Maximum forward current and capacitance
(d) Maximum reverse current and peak inverse voltage (PIV)
A-002-002-005
What are the major ratings for junction diodes?
(a) Maximum forward current and peak inverse voltage (PIV)
A-002-002-006
Structurally, what are the two main categories of semiconductor diodes?
(a) Junction and point contact
(b) Vacuum and point contact
(c) Electrolytic and point contact
(d) Electrolytic and junction
A-002-002-006
Structurally, what are the two main categories of semiconductor diodes?
(a) Junction and point contact
A-002-002-007
What is a common use for point contact diodes?
(a) As a constant current source
(b) As an RF detector
(c) As a constant voltage source
(d) As a high voltage rectifier
A-002-002-007
What is a common use for point contact diodes?
(b) As an RF detector
A-002-002-008
What is one common use for PIN diodes?
(a) As a constant current source
(b) As a high voltage rectifier
(c) As an RF switch
(d) As a constant voltage source
A-002-002-008
What is one common use for PIN diodes?
(c) As an RF switch
A-002-002-009
A Zener diode is a device used to:
(a) dissipate voltage
(b) decrease current
(c) increase current
(d) regulate voltage
A-002-002-009
A Zener diode is a device used to:
(d) regulate voltage
A-002-002-010
If a Zener diode rated at 10 V and 50 watts was operated at maximum dissipation rating, it would conduct ____ amperes:
(a) 5
(b) 50
(c) 0.05
(d) 0.5
A-002-002-010
If a Zener diode rated at 10 V and 50 watts was operated at maximum dissipation rating, it would conduct ____ amperes:
(a) 5
A-002-002-011
The power-handling capability of most Zener diodes is rated at 25 degrees C or approximately room temperature. If the temperature is increased, the power handling capability is:
(a) the same
(b) much greater
(c) less
(d) slightly greater
A-002-002-011
The power-handling capability of most Zener diodes is rated at 25 degrees C or approximately room temperature. If the temperature is increased, the power handling capability is:
(c) less
A-002-003-001
What is the alpha of a bipolar transistor?
(a) The change of collector current with respect to base current
(b) The change of base current with respect to collector current
(c) The change of collector current with respect to emitter current
(d) The change of collector current with respect to gate current
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What is the alpha of a bipolar transistor?
(c) The change of collector current with respect to emitter current
A-002-003-002
What is the beta of a bipolar transistor?
(a) The change of base current with respect to emitter current
(b) The change of collector current with respect to base current
(c) The change of collector current with respect to emitter current
(d) The change of base current with respect to gate current
A-002-003-002
What is the beta of a bipolar transistor?
(b) The change of collector current with respect to base current
A-002-003-003
Which component conducts electricity from a negative emitter to a positive collector when its base voltage is made positive?
(a) A varactor
(b) An NPN transistor
(c) A triode vacuum tube
(d) A PNP transistor
A-002-003-003
Which component conducts electricity from a negative emitter to a positive collector when its base voltage is made positive?
(b) An NPN transistor
A-002-003-004
What is the alpha of a bipolar transistor in common base configuration?
(a) Forward voltage gain
(b) Reverse current gain
(c) Forward current gain
(d) Reverse voltage gain
A-002-003-004
What is the alpha of a bipolar transistor in common base configuration?
(c) Forward current gain
A-002-003-005
In a bipolar transistor, the change of collector current with respect to base current is called:
(a) gamma
(b) delta
(c) alpha
(d) beta
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In a bipolar transistor, the change of collector current with respect to base current is called:
(d) beta
A-002-003-006
The alpha of a bipolar transistor is specified for what configuration?
(a) Common collector
(b) Common gate
(c) Common emitter
(d) Common base
A-002-003-006
The alpha of a bipolar transistor is specified for what configuration?
(d) Common base
A-002-003-007
The beta of a bipolar transistor is specified for what configurations?
(a) Common emitter or common gate
(b) Common base or common collector
(c) Common emitter or common collector
(d) Common base or common emitter
A-002-003-007
The beta of a bipolar transistor is specified for what configurations?
(c) Common emitter or common collector
A-002-003-008
Which component conducts electricity from a positive emitter to a negative collector when its base is made negative?
(a) A triode vacuum tube
(b) A PNP transistor
(c) A varactor
(d) An NPN transistor
A-002-003-008
Which component conducts electricity from a positive emitter to a negative collector when its base is made negative?
(b) A PNP transistor
A-002-003-009
Alpha of a bipolar transistor is equal to:
(a) beta x (1 + beta)
(b) beta x (1 - beta)
(c) beta / (1 + beta)
(d) beta / (1 - beta)
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Alpha of a bipolar transistor is equal to:
(c) beta / (1 + beta)
A-002-003-010
The current gain of a bipolar transistor in common emitter or common collector compared to common base configuration is:
(a) very low
(b) high to very high
(c) usually about double
(d) usually about half
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The current gain of a bipolar transistor in common emitter or common collector compared to common base configuration is:
(b) high to very high
A-002-003-011
Beta of a bipolar transistor is equal to:
(a) alpha / (1 + alpha)
(b) alpha x (1 - alpha)
(c) alpha / (1 - alpha)
(d) alpha x (1 + alpha)
A-002-003-011
Beta of a bipolar transistor is equal to:
(c) alpha / (1 - alpha)
A-002-004-001
What is an enhancement-mode FET?
(a) An FET with a channel that blocks voltage through the gate
(b) An FET with a channel that allows current when the gate voltage is zero
(c) An FET without a channel no current occurs with zero gate voltage
(d) An FET without a channel to hinder current through the gate
A-002-004-001
What is an enhancement-mode FET?
(c) An FET without a channel no current occurs with zero gate voltage
A-002-004-002
What is a depletion-mode FET?
(a) An FET without a channel no current flows with zero gate voltage
(b) An FET without a channel to hinder current through the gate
(c) An FET that has a channel that blocks current when the gate voltage is zero
(d) An FET that has a channel with no gate voltage applied a current flows with zero gate voltage
A-002-004-002
What is a depletion-mode FET?
(d) An FET that has a channel with no gate voltage applied a current flows with zero gate voltage
A-002-004-003
Why do many MOSFET devices have built-in gate protective Zener diodes?
(a) The gate-protective Zener diode keeps the gate voltage within specifications to prevent the device from overheating
(b) The gate-protective Zener diode protects the substrate from excessive voltages
(c) The gate-protective Zener diode provides a voltage reference to provide the correct amount of reverse-bias gate voltage
(d) The gate-protective Zener diode prevents the gate insulation from being punctured by small static charges or excessive voltages
A-002-004-003
Why do many MOSFET devices have built-in gate protective Zener diodes?
(d) The gate-protective Zener diode prevents the gate insulation from being punctured by small static charges or excessive voltages
A-002-004-004
Why are special precautions necessary in handling FET and CMOS devices?
(a) They are light-sensitive
(b) They have micro-welded semiconductor junctions that are susceptible to breakage
(c) They have fragile leads that may break off
(d) They are susceptible to damage from static charges
A-002-004-004
Why are special precautions necessary in handling FET and CMOS devices?
(d) They are susceptible to damage from static charges
A-002-004-005
How does the input impedance of a field-effect transistor (FET) compare with that of a bipolar transistor?
(a) One cannot compare input impedance without knowing supply voltage
(b) An FET has high input impedance a bipolar transistor has low input impedance
(c) An FET has low input impedance a bipolar transistor has high input impedance
(d) The input impedance of FETs and bipolar transistors is the same
A-002-004-005
How does the input impedance of a field-effect transistor (FET) compare with that of a bipolar transistor?
(b) An FET has high input impedance a bipolar transistor has low input impedance
A-002-004-006
What are the three terminals of a junction field-effect transistor (JFET)?
(a) Emitter, base 1, base 2
(b) Gate, drain, source
(c) Emitter, base, collector
(d) Gate 1, gate 2, drain
A-002-004-006
What are the three terminals of a junction field-effect transistor (JFET)?
(b) Gate, drain, source
A-002-004-007
What are the two basic types of junction field-effect transistors (JFET)?
(a) High power and low power
(b) N-channel and P-channel
(c) MOSFET and GaAsFET
(d) Silicon and germanium
A-002-004-007
What are the two basic types of junction field-effect transistors (JFET)?
(b) N-channel and P-channel
A-002-004-008
Electron conduction in an n-channel depletion type MOSFET is associated with:
(a) p-channel depletion
(b) p-channel enhancement
(c) n-channel depletion
(d) q-channel enhancement
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Electron conduction in an n-channel depletion type MOSFET is associated with:
(c) n-channel depletion
A-002-004-009
Electron conduction in an n-channel enhancement MOSFET is associated with:
(a) q-channel depletion
(b) p-channel enhancement
(c) n-channel enhancement
(d) p-channel depletion
A-002-004-009
Electron conduction in an n-channel enhancement MOSFET is associated with:
(c) n-channel enhancement
A-002-004-010
Hole conduction in a p-channel depletion type MOSFET is associated with:
(a) p-channel depletion
(b) n-channel enhancement
(c) q-channel depletion
(d) n-channel depletion
A-002-004-010
Hole conduction in a p-channel depletion type MOSFET is associated with:
(a) p-channel depletion
A-002-004-011
Hole conduction in a p-channel enhancement type MOSFET is associated with:
(a) p-channel enhancement
(b) n-channel depletion
(c) n-channel enhancement
(d) q-channel depletion
A-002-004-011
Hole conduction in a p-channel enhancement type MOSFET is associated with:
(a) p-channel enhancement
A-002-005-001
What are the three terminals of a silicon controlled rectifier (SCR)?
(a) Gate, base 1 and base 2
(b) Base, collector and emitter
(c) Gate, source and sink
(d) Anode, cathode and gate
A-002-005-001
What are the three terminals of a silicon controlled rectifier (SCR)?
(d) Anode, cathode and gate
A-002-005-002
What are the two stable operating conditions of a silicon controlled rectifier (SCR)?
(a) Conducting and non-conducting
(b) Forward conducting and reverse conducting
(c) NPN conduction and PNP conduction
(d) Oscillating and quiescent
A-002-005-002
What are the two stable operating conditions of a silicon controlled rectifier (SCR)?
(a) Conducting and non-conducting
A-002-005-003
When a silicon controlled rectifier (SCR) is triggered, to what other semiconductor diode are its electrical characteristics similar (as measured between its cathode and anode)?
(a) The PIN diode
(b) The hot-carrier (Schottky) diode
(c) The junction diode
(d) The varactor diode
A-002-005-003
When a silicon controlled rectifier (SCR) is triggered, to what other semiconductor diode are its electrical characteristics similar (as measured between its cathode and anode)?
(c) The junction diode
A-002-005-004
Under what operating condition does a silicon controlled rectifier (SCR) exhibit electrical characteristics similar to a forward-biased silicon rectifier?
(a) When it is gated “off
(b) When it is used as a detector
(c) During a switching transition
(d) When it is gated “on
A-002-005-004
Under what operating condition does a silicon controlled rectifier (SCR) exhibit electrical characteristics similar to a forward-biased silicon rectifier?
(d) When it is gated “on
A-002-005-005
The silicon controlled rectifier (SCR) is what type of device?
(a) NPPN
(b) PNNP
(c) PPNN
(d) PNPN
A-002-005-005
The silicon controlled rectifier (SCR) is what type of device?
(d) PNPN
A-002-005-006
The control element in the silicon controlled rectifier (SCR) is called the:
(a) gate
(b) anode
(c) cathode
(d) emitter
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The control element in the silicon controlled rectifier (SCR) is called the:
(a) gate
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The silicon controlled rectifier (SCR) is a member of which family?
(a) Thyristors
(b) Phase locked loops
(c) Varactors
(d) Varistors
A-002-005-007
The silicon controlled rectifier (SCR) is a member of which family?
(a) Thyristors
A-002-005-008
In amateur radio equipment, which is the major application for the silicon controlled rectifier (SCR)?
(a) Power supply overvoltage “crowbar” circuit
(b) Class C amplifier circuit
(c) Microphone preamplifier circuit
(d) SWR detector circuit
A-002-005-008
In amateur radio equipment, which is the major application for the silicon controlled rectifier (SCR)?
(a) Power supply overvoltage “crowbar” circuit